Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors.