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Hitherto, zero-current transition (ZCT) and zero-current zero-voltage transition (ZCZVT) inverters have provided desirable switching conditions for main semiconductors, chiefly for minority carrier ones, by means of a current impulse that unavoidably increases the reactive energy of the auxiliary circuit, penalising their efficiency and device ratings. This often offsets the benefits gained by the above-mentioned soft-switching techniques. This study presents a novel family of ZCZVT inverters that overcome this problem by using a non-resonant auxiliary circuit, which is magnetically coupled to the filter inductor, reducing the inverter component count, and associated circuitry. The principles of operation of the ZCZVT inverter with a magnetically coupled auxiliary circuit is presented and analysed. Experimental results from a 1 kW, 40 kHz, laboratory prototype are used to verify the theoretical analysis and also to compare different technologies applied to the auxiliary switches. The ZCZVT inverter with a magnetically coupled auxiliary circuit and MOSFET-based auxiliary switches presented the highest efficiency, achieving 96% at full load, meanwhile its insulated gate bipolar transistor (IGBT)-based counterpart reached 94.2%.
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Martins et al. (2011) studied this question.
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