We have calculated the contribution of the lowest-order vertex-correction diagram to the direct gap of silicon at the {Γ} point, taking into account the dynamic screening of the electron-electron interaction. Our best calculation yields a contribution of 0.12 eV. This result supports the assumption of the GW approximation that vertex corrections can be neglected. We do not find a significant shift of the absolute energies.
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Bobbert et al. (1994) studied this question.
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