Material Properties of Heteroepitaxial Ir and Pb(ZrxTi1-x)O3 Films on (100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering

We investigated the crystalline quality and electrical properties of heteroepitaxial Ir and Pb(Zr x Ti1-x )O3 films deposited by sputtering on an epitaxial (100)(ZrO2)1-x (Y2O3) x film/(100)Si substrate structure. The Ir(100) and Ir(111) orientations were enhanced and reduced, respectively, by decreasing the deposition rate. The φ scan pattern of X-ray diffraction showed that the (100) oriented film was the heteroepitaxial film on the epitaxial (100)YSZ film with a cube on cube relationship. On this epitaxial (100)Ir film, a heteroepitaxial (001)PZT film was obtained by reactive sputtering. The P–E hysteresis loop of the 200-nm-thick epitaxial PZT film showed a well-saturated square shape at the ac amplitude of 3 V, and the remanent polarization 2P r and the coercive field 2E c were 83 µC/cm2 and 131 kV/cm, respectively. The leakage current was about 1×10-7 A/cm2 at ±5 V.