Thin films of semiconductors are being used in microelectronic devices. These structures experience very high transient thermal loads during operation. Phonons are the main heat carriers in these ultrafine layers. The interfaces in these structures also affect their thermophysical properties through reflection and transmission of heat carriers. This work focuses on the transient heat transport in the direction perpendicular to the plane of a double layer thinfilm structure. The analysis is based on the equation of phonon radiative transport (EPRT). This integrodifferential equation is numerically solved for the double layer. The results for the transient temperature distribution as well as the heat flow across the layers are presented.
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Raisi et al. (2002) studied this question.
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