Selective and stoichiometric reaction of copper dipivaloylmethanate [Cu(DPM)2] with surface hydroxyls on SiO2

Stoichiometric reaction of copper dipivaloylmethanate [Cu(DPM)2] with the hydroxyl group (OH) on SiO2 surface was studied by infrared spectroscopy. The stoichiometric ratio of reacted OH and Cu(DPM)2 was estimated to be ∼2–3:1 from the absorbance of the OH and the CH stretching region. The ligand DPM was removed from the SiO2 surface by treatment with water at 400 °C. The oxidation state of Cu remaining on the surface was proven to be +1 by x-ray photoelectron spectroscopy.