Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an fMAXof 621 GHz and a simultaneous fTof 428 GHz are demonstrated. A DC peak current gain β = 19 and a common-emitter breakdown voltage BVCEO=5 V are measured for 0.2 × 4.4-μm2emitter devices featuring a 20-nm-thick graded GaAsSb base with a sheet resistance of 1077 Ω/□ and a 125-nm-thick more heavily doped InP collector enabling a higher Kirk current. The present transistors are the first InP/GaAsSb DHBTs with an fMAXin excess of 600 GHz.
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Lövblom et al. (2013) studied this question.
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