Trap density of states (DOS) for two amorphous InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ~1010cm-2as its totally integrated trap density.
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Chang et al. (2011) studied this question.