Transparent amorphous strontium titanate resistive memories with transient photo-response

cycles. Through the cross-sectional microstructural analyses it is shown that the asymmetric interfaces and distribution of oxygen vacancies in the bilayer oxide stack are responsible for defining the bipolar resistive switching behaviors. A photoluminescence mapping technique is employed to map the evolution of oxygen vacancies and pinpoint the location of the conductive filament. A transient response to optical excitation (using UV and blue light) is demonstrated in the high resistance state which indicates their potential as multifunctional memories for future transparent electronics.