The application of a focused ion beam to voltage-contrast probing and repair of integrated circuits is demonstrated. Holes have been opened through passivation layers and waveforms have been acquired using voltage contrast. Voltage-coding techniques have been used to trace signals and confirm repairs. A complementary metal-oxide semiconductor (CMOS) programmable logic array (PLA) with a design error has been successfully repaired using ion beam milling to disconnect metal lines buried under thick passivation.
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Shaver et al. (1986) studied this question.