A study of controlling of dielectric properties of Pb(Zr, Ti)O3 thin film

This study shows the possibility of controlling dielectric or piezoelectric properties of PZT thin film by applying strain after the deposition. We investigate the relationship between applied strain and relative dielectric coefficient of PZT films deposited on SUS304 and SUS430 stainless steel. The results show that the relative dielectric coefficient increases with decreasing compressive strain. While the crystal orientation of PZT film deposited on SUS304 coincide with that on SUS430, the residual compressive strain in the former is different from the latter. We compare the dielectric properties of PZT film deposited on SUS304 with that on SUS430 at the same strains in the films. Dielectric properties of the former agree fairly well with those of the latter.