We have studied the contact resistance between Al‐0.9% Si and both n + and p + Si. The test vehicle utilized in this study was a four‐terminal Kelvin resistor believed to be an adequate means for providing accurate values for the contact resistance. We have conducted a statistical study of the contact resistance. Van der Pauw sheet resistivity measurements and SIMS studies were also performed for the purpose of characterizing the surface dopant concentration.
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Cohen et al. (1982) studied this question.