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We report semiconductor to metal transition (SMT) characteristics of vanadium dioxide (VO2) grown epitaxially on Si (001) at 500 °C. The epitaxial integration with Si (001) was achieved by using epitaxial tetragonal yttria-stabilized zirconia (YSZ) as an intermediate buffer layer, which was grown in situ. From x-ray (θ-2θ and ϕ-scan) and electron diffraction studies, we established that VO2 and YSZ grow in (020) and (001) orientations, respectively, on Si (001) substrate and epitaxial relationship was established to be “VO2001 or VO2100”//YSZ110//Si 100 and VO2(010)//YSZ(001)//Si(001). VO2/YSZ/Si(001) heterostructures showed approximately three orders of magnitude reversible change in resistivity and hysteresis of ∼6 K upon traversing the transition temperature. A 10 °C increase in the SMT temperature of these VO2 films, compared to the value reported for bulk VO2, has been explained on the basis of uniaxial stress along the c-axis, which can stabilize the covalent monoclinic phase up to higher temperatures. A correlation between in-plane orientations of the film and the transition width has also been suggested, which is consistent with our previously published thermodynamic model.
Gupta et al. (2009) studied this question.