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A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F lim) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F lim is identical to 〈E G〉/2, where 〈E G〉 is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F lim, the calculated values of 〈E G〉/2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controlling the variation in the quantity F lim in groups of semiconductors with the similar types of chemical bonding are analyzed.
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Brudnyı̆ et al. (2007) studied this question.
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