Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0–1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC0.53O0.99:Er when pumped at 496.5 nm, with ∼20 times intensity enhancement as compared to a-SiO2:Er. Broadband excitation in the visible was observed for a-SiC0.53O0.99:Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si–C–O networks plays an important role in enhancing the Er optical activity in a-SiCxOy:Er films.
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Gallis et al. (2005) studied this question.
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