Measurement and analysis of deposition-etch characteristics of BF3 plasma immersion ion implantation

The deposition-etch characteristics of BF3 plasmas were quantitatively measured and analyzed using a deposition monitor, and were correlated with plasma parameters. It was found that by controlling pressure and rf power, the source could be operated in regimes which were either deposition or etch dominant. This data was then applied to a −2 kV plasma immersion ion implantation BF3 process to explain retained dose characteristics. A good qualitative agreement between the deposition-etch data and implanted retained dose data was obtained.