Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps

A model is proposed for carrier transport in Si/CaF 2 nanometer periodic structures with the participation of traps in insulators. Simulation of the current-voltage characteristics of such structures showed that trap participation enhances the total carrier transport by 2–3 orders of magnitude and causes nonmonotonicity of current-voltage characteristics. The carrier transport depends on the energy level corresponding to traps, the number of states in a trap at the carrier trajectory, its deviation from a rectilinear one, insulator thickness, and potential barrier height.