Defects in InP homoepitaxial layers

Defect structures in n-type (001) and (1̄1̄1̄) homoepitaxial layers, grown by liquid phase epitaxy (LPE) on p-type InP substrates, have been evaluated by transmission electron microscopy. It is shown that, even under ideal conditions of lattice match, defect structures are observed in epilayers. The (001) layer exhibits slip structure consisting of screw dislocations. It is argued that this structure could not have evolved to accommodate either the lattice parameter difference or twist that may have been inadvertently introduced during LPE. On the other hand, the (1̄1̄1̄) layer shows isolated faults and fault clusters consisting predominantly of intrinsic faults.