Nanoscale patterning of Si(100) surfaces by scratching through the native oxide layer using atomic force microscope

We demonstrate selective electrodeposition of Cu into nanoscratches produced in native oxide covered p-type and n-type Si(100). Nanosize grooves were produced with a diamond-coated atomic force microscope tip at heavy forces. Onto these grooved surfaces, Cu was electrodeposited from a 0.01 M CuSO4+0.05 M H2SO4 electrolyte under various conditions. The results clearly show that these scratches represent activated sites for metal electrodeposition—the surrounding intact oxide layer acts as a highly efficient mask. After optimization of electrochemical parameters, we were able to achieve the deposition of uniform and well-defined structures with a lateral resolution in the 100 nm range. In general, the process opens alternate perspectives for selective electrodeposition and direct patterning of Si surfaces.