Resonant interband tunnelling in homoepitaxial InSb structures with inversion barriers

Resonant interband tunnelling through doping barriers in homoepitaxial InSb is observed. The band structures for the chosen doping profiles are calculated self-consistently including non-parabolicity effects. A p + - delta p + -i-n + -i- delta p + -p + doping structure is designed to create a two-dimensional triangular inversion well between two degenerate p-type slab layers. Holes in the p-type layer then tunnel resonantly through the two-dimensional occupied electron states of the n + -induced well into the collector on the other side. These structures exhibit symmetric negative differential resistance (NDR) with peak-to-valley ratios of 1.6 and peak current densities of 120 A cm -2 at 4.2 K.