Films of InSb are heteroepitaxially grown on GaAs substrates by MBE. In spite of a large lattice mismatch, single-crystalline films with a fairly flat surface are obtained. Experimental data on electrical properties of these films suggest that dislocation scattering represents a significant mobility limiting process above 230 K. From in-depth profiles of the electron concentration and mobility, it is found that the layer within about 1.5 μm from the interface is inferior in crystallinity.
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Yano et al. (1979) studied this question.
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