Radiation-induced rod-like defects in silicon and germanium

The structure of rod-like defects (RLD) is discussed on the basis of diffraction contrast investigations of silicon, boron implanted and subsequently annealed, as well as of electron-bombarded silicon and germanium. It will be shown that the controversial models of Salisbury and Tan et al. can be transformed into one another. Correspondingly, the transition of an interstitial defect from the unbonded state (Salisbury) into the bonded one (Tan) is considered as a possibility to explain the reverse annealing of the electrical activity of doping atoms in boron implanted silicon. Furthermore, on the basis of both the models a nucleation state of RLD is proposed, which is formed by two intersecting {113} fault planes and which explains both the strongly rectilinear shape of the RLD and the displacement vector in the 〈100〉 direction observed by several authors.