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We have investigated the contribution of Γ-X intervalley transfer to the tunneling current in single AlAs barrier heterostructures grown on a GaAs substrate by measuring I-V characteristics at low temperature and under hydrostatic pressure up to 9 kbar. The application of hydrostatic pressure affects the contribution of the Γ-X transfer process to the total tunneling current at a given bias voltage. Experimental results are compared with current-voltage characteristics calculated with a model taking into account the Γ-X transfer at heterointerfaces. Only transfer processes involving the longitudinal X valley in AlAs are considered in the calculations. Very good agreement is found for low bias conditions at all pressures.
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Carbonneau et al. (1993) studied this question.
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