The persistent photoconductivity effect at low temperatures and under hydrostatic pressure is used to study the effect of spatial correlation of DX centers on the mobility and Shubnikov–de Haas oscillations in heavily doped n-type GaAs. Upon illumination, the transport mobility and the quantum relaxation time τs decrease rapidly with increasing carrier concentration. This is due to the destruction of the correlated distribution of DX centers by the random photoionization process. The enhancement of τs due to correlations is estimated.
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Maude et al. (1992) studied this question.
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