Fourier-transform infrared spectroscopy on the charge-state-dependent local modes of the off-center substitutional oxygen impurity in GaAs has revealed an inverted ordering of the two gap levels. The metastable one-electron state shows the characteristic disproportionation into the zero- and the two-electron state. From the thermally activated decay of the local mode lines and the observed threshold energies for the photoionization cross sections σₚ⁰(1) and σₙ⁰(2), binding energies of 0.15 and 0.62 eV for the first and the second electron, respectively, are deduced.
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H. Ch. Alt (1990) studied this question.
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