High‐quality InxGa1–xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

We report here on the fabrication by organometallic chemical vapour deposition of InxGa1–xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.