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The investigation of Al2O3 doped indium zinc oxide (83 cation % In-17 cation % Zn), denoted Al2O3-IZO, shows that the conductivity of certain amorphous Al2O3-IZO samples can be 752 S cm−1 with a mobility of 26.5 cm2V−1s−1, 4 times higher than that of IZO (190 Scm−1) with an industrial standard indium and zinc atomic ratio of 83/17. Furthermore, by increasing Al2O3 content, strangely, Al2O3 doped IZO samples exhibit an unexpected high mobility trend for some of the Al2O3-IZO samples and a transport property change from semiconductor to metallic mechanism. The presence of minimum resistivity in the resistivity-temperature curve, denoted metal-semiconductor transition, is observed and interpreted through the quantum corrections to conductivity.
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Sun et al. (2011) studied this question.
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