GaInAsSb/GaSb p-n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room-temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.
No takes yet. Share an insight, caveat, or question.
Srivastava et al. (1986) studied this question.
Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context: