High resolution and high electron beam sensitivity are found in poly (glycidyl methacrylate) (PGMA). PGMA resists with sensitivities in the 1×10 -7 to 5×10 -6 C/cm 2 range and γ-values in the 1.8 to 2.7 range are easily obtained using solution polymerization and fractional precipitation. The γ-value increases with decreasing polydispersity ( M w / M n ), and γ>1.8 is obtained when M w / M n <1.4. A resist pattern of lines 0.2 µm wide with 0.24 µm spacings is obtained on a silicon wafers. This resist is useful for pattern fabrication of chromium, silicon dioxide, and polycrystalline silicon layers.
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Taniguchi et al. (1979) studied this question.