Photo‐and radiation‐sensitive materials are used are resists in the fabrication of memory and logic devices. The 64 MB DRAMs, scchedules for 1995, will requre feature sizes below 0.5 μm (see figure). Deep‐UV lithography is a promising method of achieving these targets meaning that new resists with faovrable transmission and bleaching characteristics in this spectral region are required. magnified image
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Przybilla et al. (1992) studied this question.
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