Voids formed in Si by permeable laser irradiation were investigated by comprehensive electron microscopy. Two types of voids were identified: Type (1): This type was formed mostly closer to the entrance surface of a laser, and a considerable volume of a non-diamond Si (DS) phase was formed in the surrounding matrix. Type (2): This type was formed at the focus of an incident laser, and none of dislocations, cracks and non-DS phase was observed in the surrounding matrix. Type (1) voids are considered to be formed to accommodate volume change resulting from transformation from DS to the non-DS. However, it is difficult to explain formation of Type (2) voids by this mechanism.
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Iwata et al. (2017) studied this question.
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