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The two defect‐zincblende semiconductors of the II–III2–VI4 family, CdIn2Se4 and ZnIn2Se4, contain a regular network of vacant cation zincblende sites with several properties similar to those of true vacancies. Electronic state calculations predict dramatic effects of these pseudovacancies in the upper valence band. These effects are searched for by photoemission spectroscopy with synchrotron radiation. The spectra do reveal the states related to the pseudovacancies. However, they rule out a theoretically predicted pseudovacancy gap in the valence band density of states. These results agree with the recent hypothesis of a partial cancellation of the pseudovacancy effects by lattice relaxation around each pseudovacancy.
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Margaritondo et al. (1981) studied this question.
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