The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction

Under the ultralow driven current of 25 μA an ultraviolet (UV)-blue electroluminescence (EL) with a weak defect-related emission could be obtained for the n type (n-) ZnO nanowires (NWs)/insulating (i-) polymer/p-type (p-) GaN light-emitting diode (LED). The i-MgO layer was also explored as a carrier blocking layer for the comparison. For the i-polymer inserted LED the EL emission peak was located at 400 nm, by analyzing the spectra it is believed that the emission includes several compound originations from both ZnO and GaN. The flexible carrier blocking layer, such as i-polymer, could effectively confine the radiative recombination zone.