Chemically‐vapor‐deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO 2 ) at temperatures of 1200–1400°C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate‐limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO 2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.
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Opila et al. (1998) studied this question.
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