A ZnO/ZnMgO multiple-quantum-well ultraviolet (UV) random laser diode was fabricated on a commercially available n-type GaN wafer using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that the diode exhibited fairly pure UV random lasing centered at ~370 nm under sufficient forward bias at room temperature. The full-widths at half-maximum of the sharp lasing peaks are less than 0.4 nm. The device has a very low threshold current density of 4.7 A/cm2and extremely weak visible emission.
No takes yet. Share an insight, caveat, or question.
Long et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from IEEE Electron Device Letters