Electric-field-modulated, infrared internal-reflection study of the silicon-electrolyte interface

The electric-field modulation of the internal-reflection response of a Si-electrolyte interface is shown to give information both about accumulation of free carriers, interface states, and about molecular species in the oxide or in the Helmholtz or Gouy layer. Measurements were made in either a 0.1-M KOH or 0.1-M H2SO4 solution and evidence of electromodulation of vibration bands of H3O+, OH, and H2O was obtained.