Macro- and microstress analysis in sol-gel derived Pb(ZrxTi1−x)O3 thin films

Thin films of Pb[(ZrxTi1−x)1−yMey]O3 (Me=Al, Nb) (abbreviated PZT) have been prepared by spincoating of material synthesized by a sol-gel method. In accordance with the widely used arrangement for ferroelectric random access memories, the following layer sequence served as substrate: Si(100)/SiO2/Ti/Pt. Surface profilometry has been used to characterize the macrostresses in the films. Microstresses have been determined on the basis of grazing incidence x-ray diffraction profiles evaluated by the Warren–Averbach algorithm. The macrostress behavior of the PZT thin films is independent of the doping species, whereas the determined microstress behavior strongly depends on doping species aluminum or niobium and the dopant concentration. Furthermore, the general applicability of grazing incidence x-ray diffraction measurements in combination with microstress determination following the Warren–Averbach method has been proven.