P -type polyaniline (PANI)/ n -type ZnO based heterojunction is fabricated and the effect of continuous ultraviolet (UV) exposure on its current–voltage ( I–V ) characteristics is investigated. The I–V characteristics of PANI/ZnO showed diode-like behavior under dark condition and its ideality factor and barrier height were obtained as 1.54 and 1.35 eV, respectively. For immediate UV exposure the diode showed photo-characteristics, however, during continuous UV exposure diode characteristics started to change with exposure time. After sufficient exposure time characteristics became stable and the ideality factor and barrier height after UV exposure were obtained as 7.94 and 0.92 eV, respectively. It is proposed that the permanent physical changes in PANI film during UV exposure are responsible to change the rectifying behavior. It is found that after 10 min of continuous exposure the PANI film stabilizes and the PANI/ZnO junction shows stable characteristics.
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Sharma et al. (2013) studied this question.
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