In order to fabricate thick PbZrxTi1−xO3 (PZT) films for microelectromechanical system applications, the authors introduce a concept of freestanding film without a substrate. PZT films with a thickness of up to 20μm were deposited on a very thin Pt layer without a substrate by the rf-magnetron sputtering method using a single oxide target. The Pt layer (thickness <1μm) was obtained by sputtering the Pt on a Si substrate with a carbon layer between them, and subsequently removing the carbon layer by oxidation in air at 400°C. Piezoelectric properties of the film were comparable to those of bulk PZT as a result of the removal of clamping effect of the substrate.
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Lee et al. (2007) studied this question.
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