For the first time, photo-CVD of transparent and conducting SnO2 films has been achieved under irradiation by a low-pressure Hg lamp. It was confirmed that both resonance lines (254 nm, 185 nm) are effective for the activation of CVD-sources (O2, SnCl4, SbCl5). The structural, electrical and optical properties of undoped and Sb-doped SnO2 films prepared by the photo-CVD method were evaluated. Resistivity as low as 5.48×10-3 ohm·cm with high optical transmission (80%) was obtained in Sb-doped SnO2 films (80 nm in thickness).
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Tabuchi et al. (1987) studied this question.
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