Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing

In order to investigate the feasibility of CVD metallization for IC manufacturing processes, Al and Al-Si film depositions on silicon (100) wafers were studied using a precursor gas of triisobutylaluminum with and without disilane. A new mechanism for the gas temperature controller (GTC) was provided in the process chamber so as to activate the gas thermally just prior to its arrival at a heated substrate. The typical deposition rate was 700 nm/min. Without post-annealing, an alloy of Al-0.4%Si was obtained. Specific resistivity was 3.0 µΩ·cm, and specularity was about 60% at 550 nm for the GTC-CVD films of 1 µm thickness.