Aluminum oxide (both amorphous and γ ‐ Al 2 O 3 ) have been deposited from the reaction of aluminum trimethyl and nitrous oxide at 650°C. The refractive index is 1.75 ± 0.02 and the dielectric constant is 8.5 ± 0.3 . Films have a resistivity of 10 14 ohm‐cm at 10 6 V/cm. D‐C current‐voltage characteristics indicate a Poole‐Frenkel model of conduction similar to that for Si 3 N 4 films. Turn on voltage and MAOS capacitor flat band voltage stability of ±0.03V at 300°C and 10 6 V/cm has been, attained.
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Hall et al. (1971) studied this question.