Understanding the Ga Polar n‐GaN Surface after Mg Diffusion Process

This is the authors' abstract. We don't add key points for this paper.

This work reports on the control of the n‐GaN surface using a simple Mg diffusion process. It is shown that the Mg diffusion process enables a GaN surface without Fermi‐level pinning. The process results in the realization of n‐GaN unipolar camel diodes where increasing the metal work function leads to an incremental barrier height increase. Notably, the camel diode yields a record Schottky barrier height, indicating the possibility of improving the reverse characteristics of future GaN unipolar diodes.