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February 10, 1992Applied Physics Letters

Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers

Hairui Sun G. D. Watkins F. C. Rong L. Fotiadis Edward H. Poindexter

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Abstract

Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.

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Sun et al. (1992) studied this question.

synapsesocial.com/papers/6a9f870f066313ab22965cb8 https://doi.org/10.1063/1.106548

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