A W-band, high-gain, low-noise amplifier based on pseudomorphic InGaAs-GaAs HEMT devices has been developed. The amplifier has a measured 50-dB stable gain, and 6-dB noise figure from 91 to 95 GHz. The overall amplifier measured 1.068 in*1.281 in*0.72 in and consumes a total DC power of 560 mW. These results demonstrate the highest gain ever achieved at these frequencies.>
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Ton et al. (1992) studied this question.
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