The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n + -InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated ( n ≈ (6–7) × 10 17 cm −3 ). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation (transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n + -InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately.
No takes yet. Share an insight, caveat, or question.
Bolshakova et al. (2005) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: