Photoluminescence of CF4/O2 reactive ion etched In0.53Ga0.47As surfaces

Surface change due to reactive ion etching of In0.53Gas0.47As epitaxial layers with CF4+O2 plasmas is investigated using photoluminescence techniques. Under low self-induced bias voltages, a point defect layer is generated, while under high self-induced bias voltages, a thin structure disorder is observed along with the point defect. This disorder region is shown to be significantly recovered by a 410 °C thermal annealing.