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April 15, 1999Journal of Applied Physics

Switching dependence on fabrication accuracy of tapered ends of a single giant magnetoresistance memory cell in word disturb condition

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MRM. RedjdalBoston UniversityPGPaul W. GrossAKA. Kazmi

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Redjdal et al. (1999) studied this question.

synapsesocial.com/papers/6a9fa205fd5f33d043d4b9d6https://doi.org/10.1063/1.370218
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