Experimental kinetic analysis demonstrates temperature and pressure dependencies of silicon carbide film deposition from methyltrichlorosilane, indicating optimal parameters for coating growth.
A comprehensive study of the deposition kinetics of films from methyltrichlorosilane (MTS) at subambient presures is presented. A hot‐wall reactor, coupled with an electronic microbalance, has been used to gravimetrically investigate the dependence of the deposition rate on temperature, pressure, flow rate, and feed composition in a relatively broad region of experimental conditions: 775–1075°C temperature, 20–600 Torr pressure, 100–400 cm 3 /min flow rate, and 0.025–0.33 MTS mole fraction in the feed. Deposition rate data are presented at different locations in the deposition reactor, and results on composition and morphology are reported. The results are discussed and qualitatively explained in the context of past experimental and theoretical studies on deposition and MTS decomposition.
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Papasouliotis et al. (1995) studied this question.
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