SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500°C using SiH 4 / CH 4 / H 2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented.
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Liu et al. (1995) studied this question.
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